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Dalian Institute of Technology has developed a highly reliable, low power, high sensitivity integrated sensor
[ Instrument Network Instrument Development ] Professor Huang Hui from Dalian University of Technology developed a “nanowire bridge growth technology†for leak-free current, which solved the problem of array assembly, electrode contact and material stability of nanowire devices, and prepared high reliability (8 GaN nanowire gas sensor with monthly resistance change rate <0.8%), low power consumption (room temperature operation) and high sensitivity (NO2 detection limit 0.5 ppb), the sensor can be extended to biological detection and stress strain detection, etc. Published in the international nano-domain top journal "Nano Letters".
At present, semiconductor integrated circuit chips (ICs) are developing rapidly, driving the rise of the Internet of Things and artificial intelligence industries. If the IC is likened to the human brain, the sensor is equivalent to the human sensory organ, and the two are interdependent. However, the degree of development of sensors (especially integrated micro-nano sensors) lags far behind the development of ICs. Therefore, micro-nano sensors (or sensor chips) will be another major industry after the IC industry.
Huang Hui team first studied the parasitic deposition effect in nanowire bridge growth, and invented a bridge growth method combining airflow blocking effect and surface passivation effect to solve the parasitic deposition problem; and realized "no leakage current" for the first time. Based on the GaN bridged nanowires, an integrated nanowire gas sensor with high stability, low power consumption and high sensitivity has been developed. In particular, GaN materials are third-generation semiconductors with excellent stability (high temperature resistance, oxidation resistance, acid and alkali corrosion resistance) and biocompatibility, suitable for stress and strain in harsh environments and detection of liquid and gas samples (experiment It proves that hydrofluoric acid corrosion has no effect on GaN nanowires for 48 hours, and it is widely used. This technology will drive the development of sensor chips.
(Original title: Dalian University of Technology prepares an integrated sensor with high reliability, low power consumption and high sensitivity)